Ion beam lithography
Abstract
The physical possibilities of ion beam lithography were investigated with regard to its technical applicability. Resists were evaluated concerning their suitability for ion-beam exposure, the compatibility of ion beam exposure with standard semiconductor processing for direct wafer exposure, and the focusing of intense ion beams into small spots. Based on an available focusing system, a fine-focus unit with a gallium field-emission source was constructed. With this unit gallium ions of up to 50 keV can be focused into a spot of 0.7 micron diameter.
- Publication:
-
Final Report
- Pub Date:
- September 1984
- Bibcode:
- 1984fifm.rept.....H
- Keywords:
-
- Ion Beams;
- Lithography;
- Very Large Scale Integration;
- Wafers;
- Focusing;
- Gallium;
- Metal Oxide Semiconductors;
- Photomasks;
- Instrumentation and Photography