Electronic properties of grain boundaries in GaAs: A study of oriented bicrystals prepared by epitaxial lateral overgrowth
Abstract
The electronic properties of grain boundaries in GaAs have been investigated. The optoelectronic properties of melt-grown polycrystalline GaAs were studied by cathodoluminescence. This analysis showed that grain boundary properties are influenced by both the boundary structure and the composition of the matrix. For a systematic investigation of the relationship between grain boundary structure and electronic behavior, a technique has been developed for the growth of oriented GaAs bicrystal layers by vapor-phase epitaxy using lateral overgrowth. Using this technique, a series of n-type bicrystal layers containing 110/(111) tilt boundaries with selected misorientation angles ranging from 0 to 30 degrees were grown.
- Publication:
-
Unknown
- Pub Date:
- May 1984
- Bibcode:
- 1984epgb.rept.....S
- Keywords:
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- Bicrystals;
- Gallium Arsenides;
- Grain Boundaries;
- Polycrystals;
- Semiconductors (Materials);
- Solar Cells;
- Attitude (Inclination);
- Cathodoluminescence;
- Crystal Defects;
- Crystal Structure;
- Electronics;
- Photovoltaic Cells;
- Spectroscopy;
- Vapor Phase Epitaxy;
- Solid-State Physics