Semiconductors investigated by time resolved Raman absorption and photoluminescence spectroscopy using femtosecond and picosecond laser techniques
Abstract
We report on the research performed during the period 1982-1983 under the auspices of AFOSR. The research effort follows two directions: (1) laser development: subpicosecond laser, application of anti-resonant cavity to Nd:glass, study of the emerald laser, and study of a new mode-locking dye for shorter pulses. (2) Time-resolved fluorescence and absorption studies of CdCr2Se4, GaAs and Ga(0,5)In(0.5)P with the goal to understand the interaction and kinetics of photogenerated carriers and basic assignments of the valence-conduction band transitions (CdCr2Se4). We have also investigated the dynamics of semi-insulating CdSe. Finally we have continued the research on radiation damage (neutrons and protons) in CdSe and GaAs.
- Publication:
-
Progress Report
- Pub Date:
- March 1984
- Bibcode:
- 1984cccu.rept.....A
- Keywords:
-
- Absorption Spectra;
- Charge Carriers;
- Dye Lasers;
- Fluorescence;
- Gallium Arsenides;
- Glass Lasers;
- Laser Applications;
- Photoluminescence;
- Radiation Damage;
- Raman Spectroscopy;
- Semiconductor Plasmas;
- Semiconductors (Materials);
- Absorption Spectroscopy;
- Cadmium;
- Chromium;
- Holes (Electron Deficiencies);
- Indium Phosphides;
- Kinetics;
- Laser Cavities;
- Laser Mode Locking;
- Neodymium Lasers;
- Selenium;
- Time;
- Valence;
- Lasers and Masers