Multiple double heterojunction buried laser device

A multiple double heterojunction buried laser device is formed of a bulk structure, a plurality of double heterojunction buried lasers and electrical means. The bulk structure includes, in order, an InP:Sn substrate, an InP:Te first layer, an InP:Zn second layer, an InP:Te third layer, and a capping n-type fourth layer. Multiple stripe-like openings are formed in the above layers and double heterojunction buried lasers are formed therein. The double heterojunction buried lasers include the following layers in order: an InP:Te heterojunction first layer, an InGaAsP quarternary second layer, an InP:Zn heterojunction third layer, and an InGaAsP:Zn capping fourth layer. A reverse biased junction is formed in said bulk structure so that current is confined to the lasers; the active lasing regions are above the p-type layers of the p-n reversed bias junction. The double heterojunction buried lasers can be cleaved from the laser device and operated as a single device.