A study of charge accumulation in a multilayer memory structure based on Si and GeO(x) photoelectret
Abstract
Charge accumulation in the multilayer structure Si-Si3N4-GeO(x)-SiO(x)-Me has been investigated by using the method of high-frequency C(V) characteristics. It is found that in the system studied, charge generation under the combined effect of radiation and an electric field takes place in the GeO(x) film. A model describing charge accumulation in the structure is proposed. The structure studied here can be used as an optoelectronic reversing medium for beam-addressable memory devices.
- Publication:
-
Ukrainskii Fizicheskii Zhurnal
- Pub Date:
- January 1984
- Bibcode:
- 1984UkFiZ..29..111V
- Keywords:
-
- Optical Memory (Data Storage);
- Oxide Films;
- Photonics;
- Semiconducting Films;
- Space Charge;
- Electro-Optics;
- Germanium Oxides;
- Laminates;
- Photoconductivity;
- Silicon Films;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering