A 20-GHz low-noise HEMT amplifier for satellite communications
Abstract
A description is given of a 20-Ghz low-noise amplifier that uses a new device, a low-noise high electron mobiity transistor (HEMT), developed for the receiver front-end in earth stations for 30/20-GHz satellite communications systems. The minimum noise figure of the HEMT is 3.1 dB, and the associated gain is 7.5 dB at 20 GHz. It is believed that before too long the HEMT will surpass the GaAs FET as a low-noise device. In the test amplifier at an operating frequency range from 17.6 GHz to 19.2 Ghz, the noise figure is 4.2 dB and the gain is 28.6 dB. The minimum noise figure is 3.9 dB. It is expected that cooling the amplifier will give a significant improvement in the noise figure.
- Publication:
-
Space Communication Broadcasting
- Pub Date:
- March 1984
- Bibcode:
- 1984SpCoB...2...71T
- Keywords:
-
- Amplifier Design;
- Communication Satellites;
- Microwave Amplifiers;
- Satellite Instruments;
- Spacecraft Electronic Equipment;
- Transistor Amplifiers;
- Electron Mobility;
- Field Effect Transistors;
- Ground Stations;
- Low Noise;
- Onboard Equipment;
- Electronics and Electrical Engineering