Discrete GaAs microwave devices for satellite TV converter front ends
Abstract
GaAs microwave devices for receiver front ends, especially for the home reception of satellite broadcasts in the region of 12 GHz, are reported. The basic devices used are micron and submicron single- and dual-gate MESFETs as amplifiers, oscillators, mixers and lumped elements for impedance-matching circuitry and filters. The results of chip measurements and modeling are reported. In particular, noise figures below 2 dB have been realized for the halfmicron MESFET at 12 GHz, below 2.5 dB for a single-stage monolithic broadband amplifier at 1.5 GHz, and 2.7 dB for a complete hybrid ECS down-converter module. The process technology includes direct selective ion implantation, submicron gate definition and airbridge crossovers.
- Publication:
-
Siemens Forschungs und Entwicklungsberichte
- Pub Date:
- 1984
- Bibcode:
- 1984SiFoE..13..163P
- Keywords:
-
- Communication Satellites;
- Field Effect Transistors;
- Gallium Arsenides;
- Microwave Circuits;
- Satellite Television;
- Schottky Diodes;
- Broadcasting;
- Converters;
- Equivalent Circuits;
- Hybrid Circuits;
- Integrated Circuits;
- Intermediate Frequency Amplifiers;
- Microwave Amplifiers;
- Microwave Oscillators;
- Power Amplifiers;
- Transponders;
- Electronics and Electrical Engineering