Calculations of high-current characteristics of silicon diodes at microwave frequencies

Dynamic current/voltage characteristics are calculated for silicon diodes at microwave frequencies. Forward and reverse half cycles are studied separately. Little current flows unless the forward half period exceeds the carrier transit time; then, as the frequency decreases, the peak forward current increases essentially linearly with the half period, until the dc value is attained. Avalanche multiplication is noted in the forward direction at about one half of the reverse breakdown voltage. Below the reverse breakdown voltage, the current consists solely of the stored forward charge. Above the reverse breakdown voltage, the peak current has a maximum at a frequency which depends on the diode width and temperature.