Laser-induced etching of insulators using a dc glow discharge in silane
Abstract
A new method of laser-controlled etching in which the radiation from a pulsed-ultraviolet excimer laser is used to etch inorganic insulators exposed to plasma species that were produced in a glow discharge sustained in silane is discussed. The maximum etch rate achieved was 50 nm/min for thin-film silicon dioxide.
- Publication:
-
NASA STI/Recon Technical Report N
- Pub Date:
- 1984
- Bibcode:
- 1984STIN...8423888G
- Keywords:
-
- Etching;
- Glow Discharges;
- Insulators;
- Laser Applications;
- Silanes;
- Excimer Lasers;
- Rates (Per Time);
- Thin Films;
- Ultraviolet Lasers;
- Lasers and Masers