An extension of the ideal diode analysis for the heavily doped p n diode
Abstract
In this paper, an extension of the idealdiode analysis for the heavilydoped p n junction diode is proposed. The heavy doping effects such as carrier degeneracy and band gap narrowing are accounted for by using a tractable empirical approximation for the reduced Fermienergy given by[12] and employing effective intrinsic density. Under the assumption of lowlevel injection, it is found that the injected minoritycarrier current, and the charge storage in the quasineutral regions should depend exponentially on values of F( Y), where F( Y) is a function of dopant dentisy at the depletion edge of the quasineutral emitter (or) base region of the p n junction. Results of our calculations of excess hole current for the short base and the longbase diode show significant change from the values predictged by the conventional diode theory.
 Publication:

Solid State Electronics
 Pub Date:
 June 1984
 DOI:
 10.1016/00381101(84)901916
 Bibcode:
 1984SSEle..27..595T
 Keywords:

 Carrier Density (Solid State);
 Doped Crystals;
 Junction Diodes;
 PN Junctions;
 VoltAmpere Characteristics;
 Carrier Injection;
 Current Density;
 Density Distribution;
 Design Analysis;
 Minority Carriers;
 Electronics and Electrical Engineering