Potential and limitations of Schottky-barrier barritt devices

Computer simulation of various Schottky-barrier structures is carried out to investigate the large-signal properties of these devices. Comparison between Schottky-barrier devices and their p- n junction counterparts are also made to evaluate the potential and limitations of these devices and to explain the difference in performance between them. It is shown that among various Schottky-barrier structures, the M- n- i- p⁺ structure is the most powerful one and the M- n- p- p⁺ device is the most efficient one. Furthermore, Schottky-barrier devices with low barrier heights for minority carriers (less than 0.2 eV) are capable of producing power levels close to the generated power of p- n junction devices. Investigation of the temperature dependence of the large-signal performance of these devices shows that Schottky barriers are more sensitive and exhibit their optimum performance close to room temperature value. At low temperature, the output power is limited by the low minority carrier injection, whereas at high temperature the limitation is due to the velocity-modulation losses in the injection and low-field regions of the device.