Two-dimensional transient analysis of a buried-channel charge-coupled device

An effective method of two-dimensional transient analysis of potential and charge carrier distribution in a buried-channel charge-coupled device (BCCD) operating in storage and transfer modes has been developed with the aid of the finite Fourier transform (FET) technique. The effect of different clocking schemes on charge carrier transfer inefficiency and charge handling capacity are examined and discussed using the method developed. It is also shown that, for a BCCD operating in the storage mode, two-dimensional analysis indicates that the charge handling capacity determined by one-dimensional analysis can result in overestimation, which is misleading.