A contribution to the theory of the opencircuit photovoltage of an abrupt p n junction
Abstract
The theory for calculating the opencircuit photovoltage of an abrupt p n junction, as originally given by Parrott [5], is generalized to include degeneracy and heavy doping effects. A useful approximation is given which simplifies the general theory considerably. Results are presented for silicon assuming rigid bands with parabolic density of states functions and assuming the freecarrier screening model for the bandgap narrowing.
 Publication:

Solid State Electronics
 Pub Date:
 February 1984
 DOI:
 10.1016/00381101(84)901047
 Bibcode:
 1984SSEle..27..131D
 Keywords:

 Carrier Transport (Solid State);
 Open Circuit Voltage;
 PN Junctions;
 Photovoltaic Conversion;
 Silicon Junctions;
 Carrier Density (Solid State);
 Carrier Mobility;
 Energy Gaps (Solid State);
 Quantum Mechanics;
 Space Charge;
 Electronics and Electrical Engineering