A contribution to the theory of the open-circuit photovoltage of an abrupt p- n junction

The theory for calculating the open-circuit photovoltage of an abrupt p- n junction, as originally given by Parrott [5], is generalized to include degeneracy and heavy doping effects. A useful approximation is given which simplifies the general theory considerably. Results are presented for silicon assuming rigid bands with parabolic density of states functions and assuming the free-carrier screening model for the bandgap narrowing.