Recombination in electronhole droplets in polar and nonpolar indirect band gap semiconductors and carrier concentration power law
Abstract
The dependence of the recombination relaxation rate on the carrier concentration, n, is examined in detail. It is found that in polar indirect band gap semiconductors the phononinduced recombination rate varies as n ^{{4}/{3}} at low temperatures. This is a new power law. On the other hand, in the nonpolar materials, the relaxation rate varies as a linear combination of n^{2}, n ^{{5}/{3}} and n ^{{4}/{3}} terms. We find the experimental evidence for the occurence of n ^{{5}/{3}} and n ^{{4}/{3}} contributions for the first time.
 Publication:

Solid State Communications
 Pub Date:
 May 1984
 DOI:
 10.1016/00381098(84)901406
 Bibcode:
 1984SSCom..50..611S