Injection lasers based on AlGaAsSb/GaSb and InGaAsSb/GaSb heterostructures

Isoperiodic AlGaAsSb/GaSb and InGaSb/GaSb systems are studied in order to optimize heterostructure lasers based on these materials. Liquid phase epitaxy is used to produce double heterostructures of AlGaAsSb and InGaAsSb on GaSb n-substrates doped with Te or undoped p-substrates. The geometry, production and performance of these structures are detailed. The electroluminescence spectra of double heterostructure lasers are studied experimentally and theoretically. Calculated and experimental values of the fundamental mode beamwidth of AlGaAsSb/GaSb lasers are summarized in tabular form for wavelengths of 1,660 to 1,770 nm showing good agreement between experiment and theory. A unique feature of A3B5 semiconductors revealed in the study of InGaAsSb/GaSb is that the narrow band layer has an index of refraction in a wide range of variation in the forbidden band which is less than the index of refraction of the broadband layers.