Numerical estimation of charge transfer time in charge-coupled device employing latent gallium arsenide channel
Abstract
Charge transfer inefficiency is analyzed as a function of time in latent-channel gallium arsenide CCD devices and Schottky-barrier gates for three transfer mechanisms - boundary field, self-induced drift and diffusion. Allowance is made for the drift rate saturation effect, and the relative contribution of each of the three mechanisms to charge transfer is assessed. It is found that allowance for drift rate saturation has an influence on the form of the transfer inefficiency curves.
- Publication:
-
USSR Rept Electron Elec Eng JPRS UEE
- Pub Date:
- September 1984
- Bibcode:
- 1984RpEEE....R..51P
- Keywords:
-
- Charge Coupled Devices;
- Charge Transfer;
- Estimates;
- Gallium Arsenides;
- Diffusion;
- Drift Rate;
- Mathematical Models;
- Schottky Diodes;
- Electronics and Electrical Engineering