KT3127A, KT3128A transistors

The low-power silicon p-n-p type KT3127A, KT3128A transistors are intended or amplification, generation and conversion of high-frequency oscillations and automatic amplification control in television channel and radiochannel selectors. These planar epitaxial transistors in small metal-glass casings can be used in temperatures from -45 to 85 C and relative humidity of 98% or, without condensation, at a temperature of 40 + 2 C and can stand vibratory loads in the frequency range from 1 up to 600 Hz and acceleration up to 10 g, multiple impact loads with an acceleration of 75 g or linear loads with acceleration of 25 g. The transistor, with a mass which does not exceed 0.4 gr, is characterized by low capacity emitter and collector junction capacities, low noise levels in the high frequency ranges and sharp dependence of the amplitude coefficient on emitter current so that maximum power amplification is possible for emitter currents of 3...5 mA with attenuation of not less than 20 dB for 9 mA current. The principal electrical parameters of the transistors are presented with an environmental temperature of 25 + or - 10 C, and the maximum permissible operating conditions with a temperature from -45 up to +85 C.