Circuit engineering principles for construction of bipolar large-scale integrated circuit storage devices and very large-scale main memory
Abstract
Memories are improved by increasing speed or the memory volume on a single chip. The most effective means for increasing speeds in bipolar memories are current control circuits with the lowest extraction times for a specific power consumption (1/4 pJ/bit). The control current circuitry involves multistage current switches and circuits accelerating transient processes in storage elements and links. Circuit principles for the design of bipolar memories with maximum speeds for an assigned minimum of circuit topology are analyzed. Two main classes of storage with current control are considered: the ECL type and super-integrated injection type storage with data capacities of N = 1/4 and N 4/16, respectively. The circuits reduce logic voltage differentials and the volumes of lexical and discharge buses and control circuit buses. The limiting speed is determined by the antiinterference requirements of the memory in storage and extraction modes.
- Publication:
-
USSR Rept Electron Elec Eng JPRS UEE
- Pub Date:
- June 1984
- Bibcode:
- 1984RpEEE.......27N
- Keywords:
-
- Bipolarity;
- Chips (Memory Devices);
- Computer Storage Devices;
- Large Scale Integration;
- Constraints;
- Logic Circuits;
- Switching Circuits;
- Topology;
- Very Large Scale Integration;
- Electronics and Electrical Engineering