Investigation of the waveguide properties of resonators in the case of an arbitrary distribution of permittivity

A method is developed for the numerical analysis of the transverse-mode radiation field in a semiconductor injection quantum generator in the case of an arbitrary spatial distribution of complex permittivity. This method is used to study the waveguide properties of the resonator for transverse profiles of carriers with local inhomogeneity. It is shown that two waveguide mechanisms for the formation of the transverse-mode spectrum exist in the case of a local inhomogeneity on the inversion profile: (1) a mechanism involving radiation focusing by the local inhomogeneity and a mechanism involving radiation focusing by regions outside the inhomogeneity. It is also shown that the modes focused by the right and left regions are interdependent: energy transfer between them can occur.