High-frequency characteristics of ballistic bipolar heterotransistors
Abstract
The HF characteristics of bipolar transistors based on semiconductor heterostructures are calculated and analyzed. It is suggested that, for n-p-n transistors, the motion of electrons in the base and collector junction is ballistic, while the high conductivity of the base assures its quasi-neutrality. Allowance is made for the nonquadratic character of the electron dispersion law, significant in the collector-junction region. Frequency dependences of the current gain coefficients are determined for a circuit with a common base and emitter, and boundary frequencies are determined.
- Publication:
-
Radiotekhnika i Elektronika
- Pub Date:
- November 1984
- Bibcode:
- 1984RaEl...29.2250R
- Keywords:
-
- Bipolar Transistors;
- Heterojunction Devices;
- High Frequencies;
- Ballistics;
- Electron Mobility;
- Frequency Response;
- N-P-N Junctions;
- Particle Motion;
- Power Gain;
- Electronics and Electrical Engineering