Injection locking of high-power IMPATT oscillators
Abstract
A theoretical model is proposed for a single-stage injection-locked IMPATT oscillator with nonlinear delay in the feedback circuit. The model is used to analyze the characteristics of injection-locked silicon IMPATT diodes whose power amounts to 0.5-1 W in the autonomous mode. Theoretical results are compared with experimental data.
- Publication:
-
Radiotekhnika i Elektronika
- Pub Date:
- November 1984
- Bibcode:
- 1984RaEl...29.2179G
- Keywords:
-
- Avalanche Diodes;
- Carrier Injection;
- Frequency Synchronization;
- Injection Locking;
- Microwave Oscillators;
- Nonlinear Feedback;
- Synchronized Oscillators;
- Electrical Impedance;
- Equivalent Circuits;
- Frequency Response;
- Power Gain;
- Silicon Junctions;
- Space Charge;
- Time Lag;
- Electronics and Electrical Engineering