Investigation of intermodulation distortions in FET Schottky-barrier transistors
Abstract
The method of nonlinear currents is used to analyze third-order intermodulation distortions in linear FET Schottky-barrier amplifiers. The contribution of different n transistor nonlinearities to the level of intermodulation distortions is evaluated, and theoretical and experimental results are presented. It is concluded that the analysis carried out makes it possible to assess the role of all nonlinearity sources during the formation of intermodulation components in the output-signal spectrum in the amplifier depending on the choice of the dc operating point. This makes it possible to minimize the intermodulation distortion by means of network-design techniques.
- Publication:
-
Radiotekhnika i Elektronika
- Pub Date:
- February 1984
- Bibcode:
- 1984RaEl...29..351V
- Keywords:
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- Field Effect Transistors;
- Intermodulation;
- Linear Amplifiers;
- Schottky Diodes;
- Signal Distortion;
- Network Analysis;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering