20-GHz lumped-element GaAs FET driver amplifier
Abstract
A wideband lumped-element 20-GHz driver amplifier using GaAs FET chip devices for a 30/20-GHz communications satellite is described. Also described is a wideband 17- to 22-GHz low-loss waveguide-to-microstrip transition developed to provide the input and output connections to the microstrip amplifiers. An RF output power level of 17 dBm and 12-dB gain over the 17.7to 20.2-GHz band was achieved using two stages.
- Publication:
-
RCA Review (ISSN 0033-6831
- Pub Date:
- December 1984
- Bibcode:
- 1984RCARv..45..670M
- Keywords:
-
- Chips (Electronics);
- Communication Satellites;
- Field Effect Transistors;
- Gallium Arsenides;
- Impedance Matching;
- Microwave Amplifiers;
- Integrated Circuits;
- Microstrip Devices;
- Spacecraft Communication;
- Traveling Wave Tubes;
- Waveguides;
- Electronics and Electrical Engineering