A 14-GHz cooled low-noise GaAs FET amplifier for communication satellite application
Abstract
Recent advances in GaAs FETs have facilitated the production of low noise amplifiers for Ku band satellite transponders which approximate the less the 2.2 dB system noise level performance of parametric amplifiers. The 14-GHz cooled GaAs FET low noise amplifier whose design is presented called for RF design development efforts aimed at characterizing and matching the FETs, as well as the development of a thermoelectric Peltier junction device which maintains the amplifier at -50 C. The engineering model to which attention is given has a maximum noise upon cooling of 2.1 dB, a minimum gain of 15.0 dB, and requires 5.0 W of dc power for operation.
- Publication:
-
RCA Review
- Pub Date:
- December 1984
- Bibcode:
- 1984RCARv..45..651B
- Keywords:
-
- Amplifier Design;
- Communication Satellites;
- Field Effect Transistors;
- Gallium Arsenides;
- Low Noise;
- Microwave Amplifiers;
- Cryogenic Cooling;
- Junction Diodes;
- Microwave Attenuation;
- Signal Detection;
- Superhigh Frequencies;
- Transponders;
- Waveguides;
- Electronics and Electrical Engineering