A GaAs power FET suitable for monolithic integration, with laser-processed gate and drain via connections
Abstract
- Publication:
-
RCA Review
- Pub Date:
- December 1984
- Bibcode:
- 1984RCARv..45..606C
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Gates (Circuits);
- Integrated Circuits;
- Laser Drilling;
- Microwave Circuits;
- Power Amplifiers;
- Broadband Amplifiers;
- Chips (Electronics);
- Power Gain;
- Substrates;
- Electronics and Electrical Engineering