Optical Photogenerated Traps in Semi-Insulating GaAs Bulk Material
Abstract
We report in this paper on a photogeneration of traps in semi-insulating GaAs (Horizontal Bridgman and Czochralski) under YAG excitation. We have experimentally observed this phenomenon from TSC (Thermally Stimulated Current) and near intrinsic (1.42 eV) photoconductivity after YAG excitation. The results provide evidence that YAG excitation introduces changes in the distribution of the band gap levels.
- Publication:
-
Physica Scripta
- Pub Date:
- September 1984
- DOI:
- 10.1088/0031-8949/30/3/007
- Bibcode:
- 1984PhyS...30..198B
- Keywords:
-
- Donor Materials;
- Gallium Arsenides;
- Photonics;
- Bridgman Method;
- Czochralski Method;
- Energy Gaps (Solid State);
- Photoconductivity;
- Traps;
- Yag Lasers;
- Solid-State Physics