Deviations from Matthiessen's Rule in Dilute Gallium - Alloy Crystals Oriented Along the A-Axis

In the present study we measured the resistivity of a {1,0,0}-axis Ga crystalline wires as a function of temperature and Zn impurity content. This was done in an effort to verify the existence of a "dirty limit" saturation as predicted by the two band model. Instead of the "dirty limit" saturation, in which the deviation from Matthiessen's Rule (DMR) remains constant for increasing impurity concentration, there was a decrease in the DMR in the "dirty limit". This can still be accounted for by the two band theory provided phonon drag is taken into account. It is proposed in this study that the magnitude of phonon drag is impurity dependent and that it is large enough to be observed in the "dirty limit" for Ga crystals oriented along the a-axis. Comparisons are made with b and c-axis Ga dilute alloys as well as Al and In alloys.