Light intensity pulsations in an injection locked semiconductor laser
Abstract
A self-consistent theoretical model is presented for semiconductor laser injection locking. Three first order differential equations for carrier density, field amplitude and phase are solved for large detuning, with the effects of lateral carrier diffusion and of spontaneous emission neglected. Light intensity pulsations and the associated power spectra are computed and a comparison is made with experimental results for an 830 nm CSP laser. At the upper side of the stable locking range the behavior is related to the photon/carrier resonance; at the lower side, however, the behavior is connected to the locking process (Adler, 1946).
- Publication:
-
Optical and Quantum Electronics (ISSN 0306-8919
- Pub Date:
- March 1984
- Bibcode:
- 1984OptQE..16..183M
- Keywords:
-
- Injection Lasers;
- Laser Mode Locking;
- Laser Stability;
- Luminous Intensity;
- Semiconductor Lasers;
- Carrier Density (Solid State);
- Injection Locking;
- Optical Resonance;
- Power Spectra;
- Lasers and Masers