Temperature vs. reliability in power GaAs FETs and MIC GaAs FET power amplifiers
Abstract
The reliability of a GaAs FET can only be determined by actual testing. One objective of reliability studies is to obtain data which can be used as a basis for making useful projections of the failure rate of the device under actual operating conditions. The common approach used to obtain information regarding the aging properties of a transistor within a practical time scale involves increasing the temperature beyond the normal operating point. The considered reliability study is concerned with the determination of the cumulative failure distribution of a sample population under some known degree of acceleration. The obtained results are extrapolated to normal operating conditions. The major test to be considered is high temperature life testing. The investigation is concerned with a channel temperature of 275 C. The data reviewed are based only on catastrophic failures, since this is the predominant failure mode in power FETs.
- Publication:
-
Microwave Journal
- Pub Date:
- May 1984
- Bibcode:
- 1984MiJo...27..227W
- Keywords:
-
- Accelerated Life Tests;
- Circuit Reliability;
- Field Effect Transistors;
- Gallium Arsenides;
- Integrated Circuits;
- Microwave Circuits;
- Power Amplifiers;
- Amplifier Design;
- Performance Tests;
- Reliability Analysis;
- Temperature Dependence;
- Transistor Amplifiers;
- Electronics and Electrical Engineering