Phase measurement and characterization of microwave power transistors

Efforts to design and produce phased array radar systems have resulted in an increased need for relative insertion phase length data on individual microwave power transistors. In order to insure uniform device response, it becomes necessary to include insertion phase windows as design specifications for these transistors. This article is concerned with an automated method employed for insertion-phase characterization of transistors intended for use in phased array radar systems, and an overview is presented of some of the phase properties of typical microwavea power transistors. Attention is given to aspects of insertion phase measurement, production influences, and operational influences.