6 GHz low noise amplifier using NE70083 GaAs FET
Abstract
The present investigation is concerned with a two-stage prototype amplifier designed to operate over the 5.9 to 6.4 GHz telecommunications band. Both stages employ low-cost GaAs FETs. When operated in a 50 ohm system, the amplifier has a typical 1.3 dB noise figure and 21.0 dB gain. The input matching network is designed for minimum insertion loss and broad bandwidth. Attention is given to a cricuit description, details of construction, prototype amplifier performance, a power supply schematic diagram, and a power supply PC board layout.
- Publication:
-
Microwave Journal
- Pub Date:
- November 1984
- Bibcode:
- 1984MiJo...27..189F
- Keywords:
-
- Amplifier Design;
- Field Effect Transistors;
- Gallium Arsenides;
- Low Noise;
- Microwave Amplifiers;
- Broadband Amplifiers;
- Circuit Boards;
- Impedance Matching;
- Insertion Loss;
- Power Gain;
- Power Supply Circuits;
- Transistor Amplifiers;
- Electronics and Electrical Engineering