GaAs dual-gate FET linearizer for traveling-wave tube amplifiers
Abstract
Present traveling-wave tube amplifiers used in communications systems both at ground stations and on board satellites should be highly efficient and provide linear amplification. The performance of these TWTAs are limited by intrinsic non-linearities which result in distortion. In this technical feature article, a new pre-distortion technique using GaAs dual-gate MESFETs is presented to linearize TWTAs. The results of a linearized 16-watt TWTA at 12 GHz are also presented.
- Publication:
-
Microwave Journal
- Pub Date:
- August 1984
- Bibcode:
- 1984MiJo...27..127K
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Linear Amplifiers;
- Power Amplifiers;
- Traveling Wave Amplifiers;
- Amplifier Design;
- Linearization;
- Power Efficiency;
- Spectrum Analysis;
- Electronics and Electrical Engineering