Indium phosphide mm-wave devices and components

It is pointed out that the use of InP for Gunn oscillators and amplifiers has led recently to a number of very useful products for mm-wave applications. The ability to grow high purity indium phosphide materials and the increased understanding of the operation of both amplifier and oscillator diodes has led to some significant improvements in the performance of these devices. The most important development with respect to oscillator operation has been the design and application of temperature-stable current limiting cathode contacts. InP and GaAs electronic semiconductor properties are compared in a table, taking into account suitability for a Gunn effect mm-wave device. With the exception of mobility, the characteristics are in favor of indium phosphide. Attention is given to oscillator and amplifier performance, and performance projections. It is concluded that the prospects for InP Gunn oscillators and amplifiers to fill many of the systems requirements for mm-waves are very good.