High Aluminum Composition AlGaInP Grown by Metalorganic Chemical Vapor Deposition —Impurity Doping and 590 nm (Orange) Electroluminescence—
Abstract
Improvement in doping characteristics and luminescence efficiency for MOCVD grown (AlxGa1-x)0.5In0.5P was obtained by introducing a simple air-lock system. A few hundredths Ωcm resistivity was obtained for the entire aluminum composition n-type (AlxGa1-x)0.5In0.5P and less than a few tenths Ωcm resistivity was obtained for p-type (AlxGa1-x)0.5In0.5P with x≲0.6. 590 nm orange electroluminescence from double heterostructure diodes and 555 nm green photoluminescence, the shortest wavelengths ever-reported for (AlxGa1-x)0.5In0.5P system, were observed.
- Publication:
-
Japanese Journal of Applied Physics
- Pub Date:
- September 1984
- DOI:
- Bibcode:
- 1984JaJAP..23L.746H
- Keywords:
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- Aluminum Compounds;
- Electroluminescence;
- Gallium Phosphides;
- Indium Phosphides;
- Organometallic Compounds;
- Vapor Deposition;
- Additives;
- Epitaxy;
- Lasing;
- Lasers and Masers