CW Lasing Characteristics of Visible InGaAsP Lasers Grown on GaAsP Substrates
Abstract
Continuous wave operation of visible-light emitting InGaAsP injection lasers grown on GaAs0.61P0.39 substrates by liquid phase epitaxy was obtained in the temperature range of 98-197 K. Their lasing wavelength was 630 nm at 197 K. The characteristic temperature T0 was estimated to be 58 K.
- Publication:
-
Japanese Journal of Applied Physics
- Pub Date:
- September 1984
- DOI:
- 10.1143/JJAP.23.L720
- Bibcode:
- 1984JaJAP..23L.720F
- Keywords:
-
- Continuous Wave Lasers;
- Gallium Arsenide Lasers;
- Heterojunction Devices;
- Lasing;
- Volt-Ampere Characteristics;
- Indium Phosphides;
- Injection Lasers;
- Light (Visible Radiation);
- Liquid Phase Epitaxy;
- Temperature Dependence;
- Lasers and Masers