Glow-Discharge Deposition of Amorphous Silicon from SiH3F
Abstract
Glow discharge deposition of a-Si:H:F from SiH3F as well as SiH2F2 gas has been studied in comparison to that from SiH4. Deposition rate from SiH3F exceeds that from SiH4 by 2-3 times in magnitude under a low-power deposition condition.
- Publication:
-
Japanese Journal of Applied Physics
- Pub Date:
- August 1984
- DOI:
- 10.1143/JJAP.23.L576
- Bibcode:
- 1984JaJAP..23L.576M