Dispersion of the Linewidth Enhancement Factor in Semiconductor Injection Lasers
Abstract
The dispersion of the linewidth enhancement factor α in an AlGaAs injection laser has been determined from the changes in spontaneous emission spectra as bias current is varied below threshold. It is demonstrated that the results are in good agreement with a simple model which takes account of the gain spectra and the associated anomalous dispersion of the refractive index in parabolic bands.
- Publication:
-
Japanese Journal of Applied Physics
- Pub Date:
- July 1984
- DOI:
- Bibcode:
- 1984JaJAP..23L.518O
- Keywords:
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- Injection Lasers;
- Semiconductor Lasers;
- Spectral Line Width;
- Aluminum Gallium Arsenides;
- Emission Spectra;
- Refractivity;
- Spontaneous Emission;
- Lasers and Masers