Distributed Feed Back Surface Emitting Laser Diode with Multilayered Heterostructure
Abstract
The first distributed feedback surface emitting laser diode is realized with Al0.3Ga0.7As/GaAs multilayered heterostructure. Transverse junction-stripe (TJS) type lateral carrier injection is employed. The threshold current is 120 mA at 150 K with the active layer thickness of 6 μm. The temperature coefficient of the lasing wavelength is equal to a conventional DFB laser diode.
- Publication:
-
Japanese Journal of Applied Physics
- Pub Date:
- July 1984
- DOI:
- 10.1143/JJAP.23.L512
- Bibcode:
- 1984JaJAP..23L.512O
- Keywords:
-
- Heterojunction Devices;
- Laser Outputs;
- Semiconductor Diodes;
- Semiconductor Lasers;
- Surface Emitting Lasers;
- Aluminum Gallium Arsenides;
- Emission Spectra;
- Feedback Amplifiers;
- P-N Junctions;
- Lasers and Masers