Electron escape depth variation in thin SiO2 films measured with variable photon energy
Abstract
We have used a double crystal monochromator at the Stanford Synchrotron Radiation Laboratory to study the Si/SiO2 interface using photon energies of hν=1950-3700 eV. This photon energy range allows interfaces to be observed through oxide layers 50 Å thick or more. Variations in electron escape depth and/or oxide density as a function of distance from the interface are observed over the entire kinetic energy range (100-3600 eV). We attribute these differences to a strained oxide layer near the interface.
- Publication:
-
Journal of Vacuum Science Technology A: Vacuum Surfaces and Films
- Pub Date:
- April 1984
- DOI:
- 10.1116/1.572450
- Bibcode:
- 1984JVSTA...2..584H
- Keywords:
-
- Silicon Dioxide;
- Silicon Films;
- Solid-Solid Interfaces;
- Thin Films;
- Atomic Spectra;
- Electron Optics;
- Monochromators;
- Particle Energy;
- Solid-State Physics