Carrier concentration effects on radiation damage in InP
Abstract
Minority carrier diffusion length and carrier concentration studies have been made on room-temperature 1-MeV electron irradiated liquid-encapsulated Czochralski grown Zn-doped p-InP. The damage rate for the diffusion length and carrier removal rate due to irradiation have been found to strongly decrease with an increase in the carrier concentration in InP. These phenomena suggest that the induced defects interact with impurities in InP. A preliminary study on the annealing behavior has also been performed.
- Publication:
-
Journal of Applied Physics
- Pub Date:
- April 1984
- DOI:
- 10.1063/1.333316
- Bibcode:
- 1984JAP....55.3160Y
- Keywords:
-
- Carrier Density (Solid State);
- Carrier Transport (Solid State);
- Indium Phosphides;
- Minority Carriers;
- Radiation Damage;
- Annealing;
- Electron Irradiation;
- Solid-State Physics