Growth conditions and characterization of InGaAs/GaAs strained layers superlattices
Abstract
InGaAs/GaAs strained layers superlattices have been grown by molecular beam epitaxy on GaAs. The best growth temperature was found to be 520-540 °C from photoluminescence measurements. Double x-ray diffraction was performed. It shows very good agreement with the kinematical theory. This technique proves to be of particular interest for such structures: a single profile leads to reliable and complete information on layer thickness and InGaAs composition.
- Publication:
-
Journal of Applied Physics
- Pub Date:
- April 1984
- DOI:
- 10.1063/1.333331
- Bibcode:
- 1984JAP....55.2904Q
- Keywords:
-
- Gallium Arsenides;
- Indium Arsenides;
- Molecular Beam Epitaxy;
- Photoluminescence;
- Superlattices;
- Lattice Parameters;
- Substrates;
- Temperature Effects;
- X Ray Diffraction;
- Solid-State Physics