The total implantation-induced uniaxial anisotropy field change ΔHE, and that portion attributed to the magnetostriction ΔHσ have been measured in deuterium implanted garnet films from 20 to 180 °C. No saturation in ΔHE was observed for the highest strain measured, 2.2%. ΔHE and ΔHσ were found to decrease nearly linearly with increasing temperature. The ratio ΔHσ/ΔHE was approximately 0.4. In films which were implanted with doses up to 1×1016 D+2/cm2,4πMs(I) decreased more than λ111(I) relative to their nonimplanted values, although λ111(I) decreased faster than 4πMs(I). The quantity λ111/Ms(B) in the bulk and λ111/Ms(I) in the implanted layer had different temperature dependences, which depended on the amount of implant-induced damage.