Electrical properties of namorphous/pcrystalline silicon heterojunctions
Abstract
We have measured CV characteristics and temperature dependence of JV characteristics of undoped hydrogenated amorphous silicon (aSi:H) heterojunctions formed on ptype crystalline silicon ( p cSi) substrates with different resistivities. It has been found that an abrupt heterojunction model is valid for aSi:H/p cSi heterojunctions, and the electron affinity of aSi:H has been estimated as 3.93±0.07 eV from CV characteristics. The forward current of all the junctions studied shows voltage and temperature dependence expressed as exp(∆E_{a f}/kT) exp(AV), where ∆E_{a f} and A are constants independent of voltage and temperature, being successfully explained by a multitunneling captureemission model. The reverse current is proportional to exp(∆E_{ar}/kT)(V_{D}V)^{1}^{/}^{2}, where V_{D} is the diffusion voltage and ∆E_{ar} is a constant. This current is probably limited by generationrecombination process.
 Publication:

Journal of Applied Physics
 Pub Date:
 February 1984
 DOI:
 10.1063/1.333193
 Bibcode:
 1984JAP....55.1012M
 Keywords:

 Amorphous Semiconductors;
 Electrical Properties;
 Heterojunctions;
 Silicon Junctions;
 Capacitance;
 Electric Potential;
 Electron Affinity;
 NType Semiconductors;
 PType Semiconductors;
 Temperature Dependence;
 SolidState Physics