Cosmic ray induced permanent damage in MNOS EAROMs
Abstract
Permanent damage to the memory cells in Metal Nitride Oxide Semiconductor (MNOS) Electrically Alterable Read Only Memories (EAROM) has been observed after exposure to a heavy ion beam from a cyclotron under high field (Erase/Write Mode) conditions. The probability of permanent damage depends on the system application.
- Publication:
-
IEEE Transactions on Nuclear Science
- Pub Date:
- December 1984
- DOI:
- 10.1109/TNS.1984.4333551
- Bibcode:
- 1984ITNS...31.1568B
- Keywords:
-
- Cosmic Rays;
- Electronic Equipment Tests;
- Metal-Nitride-Oxide-Semiconductors;
- Radiation Damage;
- Read-Only Memory Devices;
- Component Reliability;
- Computer Storage Devices;
- Heavy Ions;
- Ion Impact;
- Electronics and Electrical Engineering