Transient radiation effects in GaAs devices - Bulk conduction and channel modulation phenomena in D-MESFET, E-JFET, and n(+)-SI-n(+) structures
Abstract
- Publication:
-
IEEE Transactions on Nuclear Science
- Pub Date:
- December 1984
- DOI:
- Bibcode:
- 1984ITNS...31.1502F
- Keywords:
-
- Electric Current;
- Field Effect Transistors;
- Gallium Arsenides;
- Large Scale Integration;
- Radiation Hardening;
- Schottky Diodes;
- Acceptor Materials;
- Beam Currents;
- Czochralski Method;
- Donor Materials;
- Electron Microscopy;
- Electronics and Electrical Engineering