MOSFET and MOS capacitor responses to ionizing radiation
Abstract
The ionizing radiation responses of metal oxide semiconductor (MOS) field-effect transistors (FETs) and MOS capacitors are compared. It is shown that the radiation-induced threshold voltage shift correlates closely with the shift in the MOS capacitor inversion voltage. The radiation-induced interface-state density of the MOSFETs and MOS capacitors was determined by several techniques. It is shown that the presence of 'slow' states can interfere with the interface-state measurements.
- Publication:
-
IEEE Transactions on Nuclear Science
- Pub Date:
- December 1984
- DOI:
- 10.1109/TNS.1984.4333530
- Bibcode:
- 1984ITNS...31.1461B
- Keywords:
-
- Capacitors;
- Density (Mass/Volume);
- Field Effect Transistors;
- Ionizing Radiation;
- Metal Oxide Semiconductors;
- Radiation Effects;
- Volt-Ampere Characteristics;
- Electric Potential;
- N-Type Semiconductors;
- Radiation Damage;
- Solid-Solid Interfaces;
- Threshold Voltage;
- Thresholds;
- Electronics and Electrical Engineering