Physical mechanisms contributing to device 'rebound'
Abstract
The physical mechanisms that produce rebound have been identified. The positive increase in threshold voltage during a bias anneal is due to annealing of oxide trapped charge. Rebound can be predicted by measuring the contribution to the threshold voltage from radiation-induced interface states immediately after irradiation.
- Publication:
-
IEEE Transactions on Nuclear Science
- Pub Date:
- December 1984
- DOI:
- 10.1109/TNS.1984.4333525
- Bibcode:
- 1984ITNS...31.1434S
- Keywords:
-
- Annealing;
- Electric Potential;
- Ionizing Radiation;
- Metal Oxide Semiconductors;
- Radiation Dosage;
- Silicon Transistors;
- Electron Tunneling;
- Least Squares Method;
- N-Type Semiconductors;
- Oxides;
- Silicon Oxides;
- Temperature Dependence;
- Threshold Voltage;
- Thresholds;
- Electronics and Electrical Engineering