Investigation of heavy particle induced latch-up, using a Californium-252 source, in CMOS SRAMs and PROMs
Abstract
Heavy ion-induced latch-up, in commercial CMOS SRAMs and PROMs, was examined using a laboratory Californium-252 source, in order to simulate the cosmic environment. The ability to use the CASE system (Californium-252 Assessment of Single-event Effects) enabled detailed electrical measurements to be made of the devices in the latched condition.
- Publication:
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IEEE Transactions on Nuclear Science
- Pub Date:
- December 1984
- DOI:
- Bibcode:
- 1984ITNS...31.1207S
- Keywords:
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- Cmos;
- Heavy Ions;
- Latch-Up;
- Radiation Effects;
- Random Access Memory;
- Read-Only Memory Devices;
- Aerospace Environments;
- Automatic Test Equipment;
- Californium Isotopes;
- Electrical Measurement;
- Environmental Tests;
- Ion Impact;
- Ionizing Radiation;
- Very Large Scale Integration;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering