SEU of complementary GaAs static RAMs due to heavy ions
Abstract
The first measurement of single event upset (SEU) for complementary GaAs static RAMs caused by heavy ions is reported. Upset cross-sections of the circuits for 28 MeV oxygen ions are reported as well as the linear energy transfer (LET) threshold established by using 170 MeV oxygen ions at various angles of beam incidence.
- Publication:
-
IEEE Transactions on Nuclear Science
- Pub Date:
- December 1984
- DOI:
- 10.1109/TNS.1984.4333467
- Bibcode:
- 1984ITNS...31.1121Z
- Keywords:
-
- Chips (Memory Devices);
- Gallium Arsenides;
- Heavy Ions;
- Radiation Effects;
- Random Access Memory;
- Bit Error Rate;
- Circuit Reliability;
- Jfet;
- Linear Energy Transfer (Let);
- Oxygen Ions;
- Thresholds;
- Electronics and Electrical Engineering