Regenerative frequency division with a GaAs FET
Abstract
The circuit concept to be described accomplishes regenerative frequency division by employing a GaAs FET which is biased near pinchoff. The concept aims at efficient utilization of basic device characteristics, providing well-behaved divider performance and easy circuit designability. This is exemplified with the help of an experimental 16-to-8-GHz divider circuit whose output response is studied for single-tone CW, RF-pulsed, and two-tone CW excitations.
- Publication:
-
IEEE Transactions on Microwave Theory Techniques
- Pub Date:
- November 1984
- DOI:
- Bibcode:
- 1984ITMTT..32.1461R
- Keywords:
-
- Feedback Control;
- Field Effect Transistors;
- Frequency Dividers;
- Gallium Arsenides;
- Microwave Circuits;
- Continuous Radiation;
- Network Synthesis;
- Power Gain;
- Pulsed Radiation;
- Electronics and Electrical Engineering